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integrated silicon solution, inc. www.issi.com 1 rev. d 07/12/2010 is42s32200e is45s32200e copyright ? 2010 integrated silicon solution, inc. all rights reserved. issi reserves the right to make changes to this specifcation and its products at any time without notice. issi assumes no liability arising out of the application or use of any information, products or services described herein. customers are advised to obtain the lat - est version of this device specifcation before relying on any published information and before placing orders for products. integrated silicon solution, inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex - pected to cause failure of the life support system or to signifcantly affect its safety or effectiveness. products are not authorized for use in such applications unless integrated silicon solution, inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of integrated silicon solution, inc is adequately protected under the circumstances features ? clock frequency: 200, 166, 143, 133 mhz ? fully synchronous; all signals referenced to a positive clock edge ? internal bank for hiding row access/precharge ? single 3.3v power supply ? lvttl interface ? programmable burst length: (1, 2, 4, 8, full page) ? programmable burst sequence: sequential/interleave ? self refresh modes ? 4096 refresh cycles every 16ms (a2 grade) or 64ms (commercia, industrial, a1 grade) ? random column address every clock cycle ? programmable cas latency (2, 3 clocks) ? burst read/write and burst read/single write operations capability ? burst termination by burst stop and precharge command options ? packages: 86-pin tsop-ii 90-ball tf-bga ? operating temperature range: commercial (0 o c to + 70 o c) industrial (-40 o c to + 85 o c) automotive grade, a1 (-40 o c to + 85 o c) automotive grade, a2: (-40 o c to +105 o c) overview issi 's 64mb synchronous dram is42/45s32200e is organized as 524,288 bits x 32-bit x 4-bank for improved performance. the synchronous drams achieve high- speed data transfer using pipeline architecture. all inputs and outputs signals refer to the rising edge of the clock input. 512k bits x 32 bits x 4 banks (64-mbit) synchronous dynamic ram july 2010 key timing parameters parameter -5 -6 -7 -75e unit clk cycle time cas latency = 3 5 6 7 C ns cas latency = 2 10 10 10 7.5 ns clk frequency cas latency = 3 200 166 143 C mhz cas latency = 2 100 100 100 133 mhz access time from clock cas latency = 3 5 5.5 5.5 C ns cas latency = 2 8 8 8 5.5 ns
is42s32200e, is45s32200e 2 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 general description the 64mb sdram is a high speed cmos, dynamic random-access memory designed to operate in 3.3v memory systems containing 67,108,864 bits. internally confgured as a quad-bank dram with a synchronous interface. each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits. the 64mb sdram includes an auto refresh mode, and a power-saving, power-down mode. all signals are registered on the positive edge of the clock signal, clk. all inputs and outputs are lvttl compatible. the 64mb sdram has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access. a self-timed row precharge initiated at the end of the burst sequence is available with the auto precharge function enabled. precharge one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. sdram read and write accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. the registration of an active command begins accesses, followed by a read or write command. the active command in conjunction with address bits registered are used to select the bank and row to be accessed (ba0, ba1 select the bank; a0-a10 select the row). the read or write commands in conjunction with address bits registered are used to select the starting column location for the burst access. programmable read or write burst lengths consist of 1, 2, 4 and 8 locations or full page, with a burst terminate option. functional block diagram clk cke cs ras cas we a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 ba0 ba1 a10 command decoder & clock genera to r mode register refresh contr oller refresh counter self refresh cont ro ller ro w address la tch mul tiplexer column address la tch burst counter column address buffer column decoder da ta in buffer da ta out buffer dqm0-3 dq 0-31 v dd /v ddq gnd/gndq 11 11 11 11 32 32 32 32 256 (x 32) 2048 2048 2048 ro w decoder 2048 memor y cell arra y ba nk 0 sense amp i/o ga te bank contr ol logic ro w address buffer
integrated silicon solution, inc. www.issi.com 3 rev. d 07/12/2010 is42s32200e, is45s32200e pin configurations 86 pin tsop - type ii for x32 pin descriptions a0-a10 row address input a0-a7 column address input ba0, ba1 bank select address dq0 to dq31 data i/o clk system clock input cke clock enable cs chip select ras row address strobe command cas column address strobe command v dd dq0 v dd q dq1 dq2 v ss q dq3 dq4 v dd q dq5 dq6 v ss q dq7 nc v dd dqm0 we cas ras cs nc ba0 ba1 a10 a0 a1 a2 dqm2 v dd nc dq16 v ss q dq17 dq18 v dd q dq19 dq20 v ss q dq21 dq22 v dd q dq23 v dd 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 v ss dq15 v ss q dq14 dq13 v dd q dq12 dq11 v ss q dq10 dq9 v dd q dq8 nc v ss dqm1 nc nc clk cke a9 a8 a7 a6 a5 a4 a3 dqm3 v ss nc dq31 v dd q dq30 dq29 v ss q dq28 dq27 v dd q dq26 dq25 v ss q dq24 v ss we write enable dqm0-dqm3 x32 input/output mask v d d power vss ground v d d q power supply for i/o pin vss q ground for i/o pin nc no connection
is42s32200e, is45s32200e 4 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 pin configuration package code : b 90 ball tf-bga (top view) (8.00 mm x 13.00 mm body, 0.8 mm ball pitch) 1 2 3 4 5 6 7 8 9 a b c d e f g h j k l m n p r dq26 dq28 vssq vssq vddq vs s a4 a7 clk dqm1 vddq vssq vssq dq11 dq13 dq24 vddq dq27 dq29 dq31 dqm3 a5 a8 cke nc dq8 dq10 dq12 vddq dq15 vs s vssq dq25 dq30 nc a3 a6 nc a9 nc vs s dq9 dq14 vssq vs s vdd vddq dq22 dq17 nc a2 a10 nc ba 0 cas vdd dq6 dq1 vddq vdd dq23 vssq dq20 dq18 dq16 dqm2 a0 ba 1 cs we dq7 dq5 dq3 vssq dq0 dq21 dq19 vddq vddq vssq vdd a1 nc ras dqm0 vssq vddq vddq dq4 dq2 pin descriptions a0-a1 0 row address input a0-a7 column address input ba0, ba1 bank select address dq0 to dq31 data i/o clk system clock input cke clock enable cs chip select ras row address strobe command cas column address strobe command we write enable dqm0-dqm3 x32 input/output mask v d d power vss ground v d d q power supply for i/o pin vss q ground for i/o pin nc no connection
integrated silicon solution, inc. www.issi.com 5 rev. d 07/12/2010 is42s32200e, is45s32200e pin functions symbol pin no. (t sop) type function (in detail) a0-a10 25 to 27 input pin address inputs: a0-a10 are sampled during the active 60 to 66 command (row-address a0-a10) and read/write command (a0-a7 24 with a10 defning auto precharge) to select one location out of the memory array in the respective bank. a10 is sampled during a precharge command to deter- mine if all banks are to be precharged (a10 high) or bank selected by ba0, ba1 (low). the address inputs also provide the op-code during a load mode register command. ba0, ba1 22,23 input pin bank select address: ba0 and ba1 defnes which bank the active, read, write or precharge command is being applied. cas 18 input pin cas, in conjunction with the ras and we , forms the device command. see the "command truth table" for details on device commands. cke 67 input pin the cke input determines whether the clk input is enabled. the next rising edge of the clk signal will be valid when is cke high and invalid when low. when cke is low, the device will be in either power-down mode, clock suspend mode, or self refresh mode. cke is an asynchronous i nput. clk 68 input pin clk is the master clock input for this device. except for cke, all inputs to this device are acquired in synchronization with the rising edge of this pin. cs 20 input pin the cs input determines whether command input is enabled within the device. command input is enabled when cs is low, and disabled with cs is high. the device remains in the previous state when cs is high. dq0 to 2, 4, 5, 7, 8, 10,11,13 dq pin dq0 to dq15 are dq pins. dq through these pins can be controlled in byte units dq31 74,76,77,79,80,82,83,85 using the dqm0-dqm3 pins 45,47,48,50,51,53,54,56 31,33,34,36,37,39,40,42 dqm0 16,28,59,71 input pin dqmx control thel ower and upper bytes of the dq buffers. in read mode, dqm3 the output buffers are place in a high-z state. during a write cycle the input data is masked. when dqmx is sampled high and is an input mask signal for write accesses and an output enable signal for read accesses. dq0 through dq7 are controlled by dqm0. dq8 throughdq15 are controlled by dqm1. dq16 through dq23 are controlled by dqm2. dq24 through dq31 are controlled by dqm3. ras 19 input pin ras, in conjunction with cas and we , forms the device command. see the "com- mand truth table" item for details on device commands. we 17 input pin we, in conjunction with ras and cas , forms the device command. see the "com- mand truth table" item for details on device commands. v d d q 3,9,35,41,49,55,75,81 supply pin v d d q is the output buffer power supply. v d d 1,15,29,43 supply pin v d d is the device internal power supply. g nd q 6,12,32,38,46,52,78,84 supply pin g nd q is the output buffer ground. g nd 44,58,72,86 supply pin g nd is the device internal ground.
is42s32200e, is45s32200e 6 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 read the read command selects the bank from ba0, ba1 inputs and starts a burst read access to an active row. inputs a0-a7 provides the starting column location. when a10 is high, this command functions as an auto precharge command. when the auto precharge is selected, the row being accessed will be precharged at the end of the read burst. the row will remain open for subsequent accesses when auto precharge is not selected. dqs read data is subject to the logic level on the dqm inputs two clocks earlier. when a given dqm signal was registered high, the corresponding dqs will be high-z two clocks later. dqs will provide valid data when the dqm signal was registered low. write a burst write access to an active row is initiated with the write command. ba0, ba1 inputs selects the bank, and the starting column location is provided by inputs a0-a7. whether or not auto-precharge is used is determined by a10. the row being accessed will be precharged at the end of the write burst, if auto precharge is selected. if auto precharge is not selected, the row will remain open for subsequent accesses. a memory array is written with corresponding input data on dqs and dqm input logic level appearing at the same time. data will be written to memory when dqm signal is low. when dqm is high, the corresponding data inputs will be ignored, and a write will not be executed to that byte/column location. precharge the precharge command is used to deactivate the open row in a particular bank or the open row in all banks. ba0, ba1 can be used to select which bank is precharged or they are treated as dont care. a10 determined whether one or all banks are precharged. after execut - ing this command, the next command for the selected banks(s) is executed after passage of the period t rp , which is the period required for bank precharging. once a bank has been precharged, it is in the idle state and must be activated prior to any read or write commands being issued to that bank. auto precharge the auto precharge function ensures that the pre- charge is initiated at the earliest valid stage within a burst. this function allows for individual-bank precharge without requiring an explicit command. a10 to enables the auto precharge function in conjunction with a specifc read or write command. for each individual read or write command, auto precharge is either enabled or disabled. auto precharge does not apply except in full-page burst mode. upon completion of the read or write burst, a precharge of the bank/row that is addressed is automatically performed. auto refresh command this command executes the auto refresh operation. the row address and bank to be refreshed are automatically generated during this operation. the stipulated period (t r c ) is required for a single refresh operation, and no other com - mands can be executed during this period. this command is executed at least 4096 times every t r e f . during an auto refresh command, address bits are dont care. this command corresponds to cbr auto-refresh. self refresh during the self refresh operation, the row address to be refreshed, the bank, and the refresh interval are gen - erated automatically internally. self refresh can be used to retain data in the sdram without external clocking, even if the rest of the system is powered down. the self refresh operation is started by dropping the cke pin from high to low. during the self refresh operation all other inputs to the sdram become dont care.the device must remain in self refresh mode for a minimum period equal to t r a s or may remain in self refresh mode for an indefnite period beyond that.the self-refresh operation continues as long as the cke pin remains low and there is no need for external control of any other pins. the next command cannot be executed until the device internal recovery period (t r c ) has elapsed. once cke goes high, the nop command must be issued (minimum of two clocks) to provide time for the completion of any internal refresh in progress. after the self-refresh, since it is impossible to determine the address of the last row to be refreshed, an auto-refresh should immediately be performed for all addresses. burst terminate the burst terminate command forcibly terminates the burst read and write operations by truncating either fxed-length or full-page bursts and the most recently registered read or write command prior to the burst terminate. command inhibit command inhibit prevents new commands from being executed. operations in progress are not affected, apart from whether the clk signal is enabled no operation when cs is low, the nop command prevents unwanted commands from being registered during idle or wait states.
integrated silicon solution, inc. www.issi.com 7 rev. d 07/12/2010 is42s32200e, is45s32200e load mode register during the load mode regsiter command the mode register is loaded from a0-a10. this command can only be issued when all banks are idle. active command when the active command is activated, ba0, ba1 inputs selects a bank to be accessed, and the address inputs on a0-a10 selects the row. until a precharge command is issued to the bank, the row remains open for accesses.
is42s32200e, is45s32200e 8 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 truth table C commands and dqm operation (1) function cs ras cas we dqm addr dqs command inhibit (nop) h x x x x x x no operation (nop) l h h h x x x active (select bank and activate row) (3) l l h h x bank/row x read (select bank/column, start read burst) (4) l h l h l/h (8) bank/col x write (select bank/column, start write burst) (4) l h l l l/h (8) bank/col valid burst terminate l h h l x x active precharge (deactivate row in bank or banks) (5) l l h l x code x auto refresh or self refresh (6,7) l l l h x x x (enter self refresh mode) load mode register (2) l l l l x op-code x write enable/output enable (8) l active write inhibit/output high-z (8) h high-z notes: 1. cke is high for all commands except self refresh. 2. a0-a10 defne the op-code written to the mode register. 3. a0-a10 provide row address, and ba0, ba1 determine which bank is made active. 4. a0-a7 (x32) provide column address; a10 high enables the auto precharge feature (nonpersistent), while a10 low disables auto precharge; ba0, ba1 determine which bank is being read from or written to. 5. a10 low: ba0, ba1 determine the bank being precharged. a10 high: all banks precharged and ba0, ba1 are dont care. 6. auto refresh if cke is high, self refresh if cke is low. 7. internal refresh counter controls row addressing; all inputs and dqs are dont care except for cke. 8. activates or deactivates the dqs during writes (zero-clock delay) and reads (two-clock delay).
integrated silicon solution, inc. www.issi.com 9 rev. d 07/12/2010 is42s32200e, is45s32200e truth table C current state bank n, command to bank n (1-6) current state command (action) cs ras cas we any command inhibit (nop/continue previous operation) h x x x no operation (nop/continue previous operation) l h h h idle active (select and activate row) l l h h auto refresh (7) l l l h load mode register (7) l l l l precharge (11) l l h l row active read (select column and start read burst) (10) l h l h write (select column and start write burst) (10) l h l l precharge (deactivate row in bank or banks) (8) l l h l read read (select column and start new read burst) (10) l h l h (auto write (select column and start write burst) (10) l h l l precharge precharge (truncate read burst, start precharge) (8) l l h l disabled) burst terminate (9) l h h l write read (select column and start read burst) (10) l h l h (auto write (select column and start new write burst) (10) l h l l precharge precharge (truncate write burst, start precharge) (8) l l h l disabled) burst terminate (9) l h h l note: 1. this table applies when cke n-1 was high and cke n is high (see truth table - cke) and after t x s r has been met (if the previous state was self refresh). 2. this table is bank-specifc, except where noted; i.e., the current state is for a specifc bank and the commands shown are those allowed to be issued to that bank when in that state. exceptions are covered in the notes below. truth table C cke (1-4) curren t state commandn actionn cken-1 cken power-down x maintain power-down l l self refresh x maintain self refresh l l clock suspend x maintain clock suspend l l power-down (5) command inhibit or nop exit power-down l h self refresh (6) command inhibit or nop exit self refresh l h clock suspend (7) x exit clock suspend l h all banks idle command inhibit or nop power-down entry h l all banks idle auto refresh self refresh entry h l reading or writing valid clock suspend entry h l see truth table C current state bank n, command to bank n h h notes: 1. cken is the logic state of cke at clock edge n; cken-1 was the state of cke at the previous clock edge. 2. current state is the state of the sdram immediately prior to clock edge n. 3. commandn is the command registered at clock edge n, and actonn is a result of commandn. 4. all states and sequences not shown are illegal or reserved. 5. exiting power-down at clock edge n will put the device in the all banks idle state in time for clock edge n+1 (provided that t c k s is met) . 6. exiting self refresh at clock edge n will put the device in all banks idle state once t x s r is met. command inhibit or nop commands should be issued on clock edges occurring during the t x s r period. a minimum of two nop commands must be sent during t x s r period. 7. after exiting clock suspend at clock edge n , the device will resume operation and recognize the next command at clock edge n+1.
is42s32200e, is45s32200e 10 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 3. current state defnitions: idle: the bank has been precharged, and t r p has been met. row active: a row in the bank has been activated, and t r c d has been met. no data bursts/accesses and no register accesses are in progress. read: a read burst has been initiated, with auto precharge disabled, and has not yet terminated or been termi - nated. write: a write burst has been initiated, with auto precharge disabled, and has not yet terminated or been termi- nated. 4. the following states must not be interrupted by a command issued to the same bank. command inhibit or nop commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states. allowable com - mands to the other bank are determined by its current state and current state bank n truth tables. precharging: starts with registration of a precharge command and ends when t r p is met. once t r p is met, the bank will be in the idle state. row activating: starts with registration of an active command and ends when t r c d is met. once t r c d is met, the bank will be in the row active state. read w/auto precharge enabled: starts with registration of a read command with auto precharge enabled and ends when t r p has been met. once t r p is met, the bank will be in the idle state. write w/auto precharge enabled: starts with registration of a write command with auto precharge enabled and ends when t r p has been met. once t r p is met, the bank will be in the idle state. 5. the following states must not be interrupted by any executable command; command inhibit or nop commands must be applied on each positive clock edge during these states. refreshing: starts with registration of an auto refresh command and ends when t r c is met. once t r c is met, the sdram will be in the all banks idle state. accessing mode register: starts with registration of a load mode register command and ends when t m r d has been met. once t m r d is met, the sdram will be in the all banks idle state. precharging all: starts with registration of a precharge all command and ends when t r p is met. once t r p is met, all banks will be in the idle state. 6. all states and sequences not shown are illegal or reserved. 7. not bank-specifc; requires that all banks are idle. 8. may or may not be bank-specifc; if all banks are to be precharged, all must be in a valid state for precharging. 9. not bank-specifc; burst terminate affects the most recent read or write burst, regardless of bank. 10. reads or writes listed in the command (action) column include reads or writes with auto precharge enabled and reads or writes with auto precharge disabled. 11. does not affect the state of the bank and acts as a nop to that bank.
integrated silicon solution, inc. www.issi.com 11 rev. d 07/12/2010 is42s32200e, is45s32200e truth table C current state bank n, command to bank m (1-6) current state command (action) cs ras cas we any command inhibit (nop/continue previous operation) h x x x no operation (nop/continue previous operation) l h h h idle any command otherwise allowed to bank m x x x x row active (select and activate row) l l h h activating, read (select column and start read burst) (7) l h l h active, or write (select column and start write burst) (7) l h l l precharging precharge l l h l read active (select and activate row) l l h h (auto read (select column and start new read burst) (7,10) l h l h precharge write (select column and start write burst) (7,11) l h l l disabled) precharge (9) l l h l write active (select and activate row) l l h h (auto read (select column and start read burst) (7,12) l h l h precharge write (select column and start new write burst) (7,13) l h l l disabled) precharge (9) l l h l read active (select and activate row) l l h h (with auto read (select column and start new read burst) (7,8,14) l h l h precharge) write (select column and start write burst) (7,8,15) l h l l precharge (9) l l h l write active (select and activate row) l l h h (with auto read (select column and start read burst) (7,8,16) l h l h precharge) write (select column and start new write burst) (7,8,17) l h l l precharge (9) l l h l note: 1. this table applies when cke n-1 was high and cke n is high (truth table - cke) and after t x s r has been met (if the previ - ous state was self refresh). 2. this table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable) . excep- tions are covered in the notes below. 3. current state defnitions: idle: the bank has been precharged, and t r p has been met. row active: a row in the bank has been activated, and t r c d has been met. no data bursts/accesses and no register accesses are in progress. read: a read burst has been initiated, with auto precharge disabled, and has not yet terminated or been termi - nated. write: a write burst has been initiated, with auto precharge disabled, and has not yet terminated or been termi- nated. read w/auto precharge enabled: starts with registration of a read command with auto precharge enabled, and ends when t r p has been met. once t r p is met, the bank will be in the idle state. write w/auto precharge enabled: starts with registration of a write command with auto precharge enabled, and ends when t r p has been met. once t r p is met, the bank will be in the idle state. 4. auto refresh, self refresh and load mode register commands may only be issued when all banks are idle. 5. a burst terminate command cannot be issued to another bank; it applies to the bank represented by the current state only. 6. all states and sequences not shown are illegal or reserved. 7. reads or writes to bank m listed in the command (action) column include reads or writes with auto precharge enabled and reads or writes with auto precharge disabled.
is42s32200e, is45s32200e 12 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 8. concurrent auto precharge: bank n will initiate the auto precharge command when its burst has been inter- rupted by bank ms burst. 9. burst in bank n continues as initiated. 10. for a read without auto precharge interrupted by a read (with or without auto precharge), the read to bank m will interrupt the read on bank n, cas latency later (consecutive read bursts). 11. for a read without auto precharge interrupted by a write (with or without auto precharge), the write to bank m will inter- rupt the read on bank n when registered (read to write). dqm should be used one clock prior to the write command to prevent bus contention. 12. for a write without auto precharge interrupted by a read (with or without auto precharge), the read to bank m will interrupt the write on bank n when registered (write to read), with the data-out appearing cas latency later. the last valid write to bank n will be data-in registered one clock prior to the read to bank m. 13. for a write without auto precharge interrupted by a write (with or without auto precharge), the write to bank m will inter- rupt the write on bank n when registered (write to write). the last valid write to bank n will be data-in registered one clock prior to the read to bank m. 14. for a read with auto precharge interrupted by a read (with or without auto precharge), the read to bank m will interrupt the read on bank n, cas latency later. the precharge to bank n will begin when the read to bank m is registered (fig cap 1). 15. for a read with auto precharge interrupted by a write (with or without auto precharge), the write to bank m will interrupt the read on bank n when registered. dqm should be used two clocks prior to the write command to prevent bus contention. the precharge to bank n will begin when the write to bank m is registered (fig cap 2). 16. for a write with auto precharge interrupted by a read (with or without auto precharge), the read to bank m will interrupt the write on bank n when registered, with the data-out appearing cas latency later. the precharge to bank n will begin after t wr is met, where t w r begins when the read to bank m is registered. the last valid write to bank n will be data-in regis- tered one clock prior to the read to bank m (fig cap 3). 17. for a write with auto precharge interrupted by a write (with or without auto precharge), the write to bank m will interrupt the write on bank n when registered. the precharge to bank n will begin after t w r is met, where t wr begins when the write to bank m is registered. the last valid write to bank n will be data registered one clock prior to the write to bank m (fig cap 4).
integrated silicon solution, inc. www.issi.com 13 rev. d 07/12/2010 is42s32200e, is45s32200e functional description the 64mb sdrams 512k x 32 x 4 banks) are quad-bank drams which operate at 3.3v and include a synchronous interface (all signals are registered on the positive edge of the clock signal, clk). each of the 16,777,216-bit banks is organized as 2,048 rows by 256 columns by 32bits. read and write accesses to the sdram are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. accesses begin with the registration of an ac - tive command which is then followed by a read or write command. the address bits registered coincident with the active command are used to select the bank and row to be accessed (ba0 and ba1 select the bank, a0-a10 select the row) . the address bits (a0-a7) registered coincident with the read or write command are used to select the starting column location for the burst access. prior to normal operation, the sdram must be initial- ized. the following sections provide detailed information covering device initialization, register defnition, command descriptions and device operation. initialization sdrams must be powered up and initialized in a predefned manner. the 64m sdram is initialized after the power is applied to v d d and v d d q (simultaneously) and the clock is stable. a 100s delay is required prior to issuing any command other than a command inhibit or a nop . the command inhibit or nop may be applied during the 100us period and continue should at least through the end of the period. with at least one command inhibit or nop command having been applied, a precharge command should be applied once the 100s delay has been satisfed. all banks must be precharged. this will leave all banks in an idle idle state where two auto refresh cycles must be performed. after the auto refresh cycles are complete, the srdram is then ready for mode register programming. the mode register should be loaded prior to applying any operational command because it will power up in an unknown state.
is42s32200e, is45s32200e 14 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 register definition mode register the mode register is used to defne the specifc mode of operation of the sdram. this defnition includes the selection of a burst length, a burst type, a cas\ latency, an operating mode and a write burst mode, as shown in mode register definition. the mode register is programmed via the load mode register command and will retain the stored information until it is programmed again or the device loses power. mode register bits m0-m2 specify the burst length, m3 specifes the type of burst (sequential or interleaved) , m4- m6 specify the cas latency, m7 and m8 specify the operating mode, m9 specifes the write burst mode, and m10 and m11 and m12 are reserved for future use. the mode register must be loaded when all banks are idle, and the controller must wait the specifed time before initiating the subsequent operation. violating either of these requirements will result in unspecifed operation. mode register definition latency mode m6 m5 m4 cas latency 0 0 0 reserved 0 0 1 reserved 0 1 0 2 0 1 1 3 1 0 0 reserved 1 0 1 reserved 1 1 0 reserved 1 1 1 reserved write burst mode m9 mode 0 burst write 1 single-bit write mrs m8 m7 mrs 0 0 mode register set ? ? all other states reserved burst type m3 type 0 sequential 1 interleaved burst length m2 m1 m0 sequential interleave 0 0 0 1 1 0 0 1 2 2 0 1 0 4 4 0 1 1 8 8 1 0 0 reserved reserved 1 0 1 reserved reserved 1 1 0 reserved reserved 1 1 1 full page reserved address bus ba0,1 a10/ap a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 (1) 00 (1) note : 1. maintain low during mode register set.
integrated silicon solution, inc. www.issi.com 15 rev. d 07/12/2010 is42s32200e, is45s32200e b urst definition burst starting column order of accesses within a burst length address type = sequential type = interleaved a0 2 0 0-1 0-1 1 1-0 1-0 a1 a0 0 0 0-1-2-3 0-1-2-3 4 0 1 1-2-3-0 1-0-3-2 1 0 2-3-0-1 2-3-0-1 1 1 3-0-1-2 3-2-1-0 a2 a1 a0 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 8 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 full n = a0-a7 cn, cn + 1, cn + 2 not supported page cn + 3, cn + 4... (y) (location 0-y) cn - 1, cn burst length read and write accesses to the sdram are burst oriented, with the burst length being programmable, as shown in mode register definition. the burst length deter- mines the maximum number of column locations that can be accessed for a given read or write command. burst lengths of 1, 2, 4 or 8 locations are available for both the sequential and the interleaved burst types, and a full-page burst is available for the sequential type. the full-page burst is used in conjunction with the burst terminate command to generate arbitrary burst lengths. reserved states should not be used, as unknown operation or incompatibility with future versions may result. when a read or write command is issued, a block of columns equal to the burst length is effectively selected. all accesses for that burst take place within this block, mean - ing that the burst will wrap within the block if a boundary is reached. the block is uniquely selected by a1-a7 (x32) when the burst length is set to two; by a2-a7 (x32) when the burst length is set to four; and by a3-a7 (x32) when the burst length is set to eight. the remaining (least signifcant) address bit(s) is (are) used to select the starting location within the block. full-page bursts wrap within the page if the boundary is reached. burst type accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit m3. the ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in burst definition table.
is42s32200e, is45s32200e 16 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 don't care undefined clk command dq read nop nop nop cas latency - 3 t ac t oh d out t0 t1 t2 t3 t4 t lz clk command dq read nop nop cas latency - 2 t ac t oh d out t0 t1 t2 t3 t lz cas latency cas latency the cas latency is the delay, in clock cycles, between the registration of a read command and the availability of the frst piece of output data. the latency can be set to two or three clocks. if a read command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge n + m. the dqs will start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data will be valid by clock edge n + m. for example, assuming that the clock cycle time is such that all relevant access times are met, if a read command is registered at t0 and the latency is programmed to two clocks, the dqs will start driving after t1 and the data will be valid by t2, as shown in cas latency diagrams. the allowable operating frequency table indicates the operating frequencies at which each cas latency setting can be used. reserved states should not be used as unknown operation or incompatibility with future versions may result. cas latency allowable operating frequency (mhz) speed cas latency = 2 cas latency = 3 -5 100 200 -6 100 166 -7 100 143 -75e 133 C operating mode the normal operating mode is selected by setting m7 and m8 to zero; the other combinations of values for m7 and m8 are reserved for future use and/or test modes. the programmed burst length applies to both read and write bursts. test modes and reserved states should not be used be- cause unknown operation or incompatibility with future versions may result. write burst mode when m9 = 0, the burst length programmed via m0-m2 applies to both read and write bursts; when m9 = 1, the programmed burst length applies to read bursts, but write accesses are single-location (nonburst) accesses.
integrated silicon solution, inc. www.issi.com 17 rev. d 07/12/2010 is42s32200e, is45s32200e activating specifc row within specifc bank don't care clk command ac tive nop nop t rcd t0 t1 t2 t3 t4 read or write o peration bank/row activation before any read or write commands can be issued to a bank within the sdram, a row in that bank must be opened. this is accomplished via the active command, which selects both the bank and the row to be activated (see activating specifc row within specifc bank ). after opening a row (issuing an active command) , a read or write command may be issued to that row, subject to the t r c d specifcation. minimum t r c d should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the active command on which a read or write command can be entered. for example, a t r c d specifcation of 20ns with a 125 mhz clock (8ns period) results in 2.5 clocks, rounded to 3. this is refected in the following example, which cov - ers any case where 2 < [t r c d (min)/t c k ] 3. (the same procedure is used to convert other specifcation limits from time units to clock cycles). a subsequent active command to a different row in the same bank can only be issued after the previous active row has been closed (precharged). the minimum time interval between successive active commands to the same bank is defned by t r c . a subsequent active command to another bank can be issued while the frst bank is being accessed, which results in a reduction of total row-access overhead. the minimum time interval between successive active commands to different banks is defned by t r r d . example: meeting t r c d (min) when 2 < [t r c d (min)/t c k ] 3 clk cke high row address bank address cs ras cas we a0-a10 ba0, ba1
is42s32200e, is45s32200e 18 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 read command reads read bursts are initiated with a read command, as shown in the read command diagram. the starting column and bank addresses are provided with the read command, and auto precharge is either enabled or disabled for that burst access. if auto precharge is enabled, the row being accessed is precharged at the completion of the burst. for the generic read commands used in the fol- lowing illustrations, auto precharge is disabled. during read bursts, the valid data-out element from the starting column address will be available following the cas latency after the read command. each subsequent data-out element will be valid by the next positive clock edge. the cas latency diagram shows general timing for each possible cas latency setting. upon completion of a burst, assuming no other commands have been initiated, the dqs will go high-z. a full-page burst will continue until terminated. (at the end of the page, it will wrap to column 0 and continue.) data from any read burst may be truncated with a sub- sequent read command, and data from a fxed-length read burst may be immediately followed by data from a read command. in either case, a continuous fow of data can be maintained. the frst data element from the new burst follows either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. the new read command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the cas latency minus one. this is shown in consecutive read bursts for cas latencies of two and three; data element n + 3 is either the last of a burst of four or the last desired of a longer burst. the 64mb sdram uses a pipelined architecture and therefore does not require the 2n rule associated with a prefetch architec - ture. a read command can be initiated on any clock cycle following a previous read command. full-speed random read accesses can be performed to the same bank, as shown in random read accesses, or each subsequent read may be performed to a different bank. data from any read burst may be truncated with a sub - sequent write command, and data from a fxed-length read burst may be immediately followed by data from a write command (subject to bus turnaround limitations). the write burst may be initiated on the clock edge im- mediately following the last (or last desired) data element from the read burst, provided that dq contention can be avoided. in a given system design, there may be a pos - sibility that the device driving the input data will go low-z before the sdram dqs go high-z. in this case, at least a single-cycle delay should occur between the last read data and the write command. the dqm input is used to avoid dq contention, as shown in figures rw1 and rw2. the dqm signal must be asserted (high) at least two clocks prior to the write command (dqm latency is two clocks for output buffers) to suppress data-out from the read. once the write command is registered, the dqs will go high-z (or remain high-z), regardless of the state of the dqm signal, provided the dqm was active on the clock just prior to the write command that truncated the read command. if not, the second write will be an invalid write. for example, if dqm was low during t4 in figure rw2, then the writes at t5 and t7 would be valid, while the write at t6 would be invalid. the dqm signal must be de-asserted prior to the write command (dqm latency is zero clocks for input buffers) to ensure that the written data is not masked. figure rw1 shows the case where the clock frequency allows for bus contention to be avoided without adding a nop cycle, and figure rw2 shows the case where the additional nop is needed. a fxed-length read burst may be followed by, or truncated with, a precharge command to the same bank (provided that auto precharge was not activated) , and a full-page burst may be truncated with a precharge command to the clk cke high column address auto precharge no precharge cs ras cas we a0-a7 a10 ba0, ba1 bank address a8, a9
integrated silicon solution, inc. www.issi.com 19 rev. d 07/12/2010 is42s32200e, is45s32200e don't care undefined clk command dq read nop nop nop cas latency - 3 t ac t oh d out t0 t1 t2 t3 t4 t lz clk command dq read nop nop cas latency - 2 t ac t oh d out t0 t1 t2 t3 t lz cas latency same bank. the precharge command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the cas latency minus one. this is shown in the read to precharge diagram for each possible cas latency; data element n + 3 is either the last of a burst of four or the last desired of a longer burst. following the precharge command, a subsequent command to the same bank cannot be issued until t r p is met. note that part of the row precharge time is hidden during the access of the last data element(s). in the case of a fxed-length burst being executed to completion, a precharge command issued at the optimum time (as described above) provides the same operation that would result from the same fxed-length burst with auto precharge. the disadvantage of the pre- charge command is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the precharge command is that it can be used to truncate fxed-length or full-page bursts. full-page read bursts can be truncated with the burst terminate command, and fxed-length read bursts may be truncated with a burst terminate command, provided that auto precharge was not activated. the burst terminate command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the cas latency minus one. this is shown in the read burst termination diagram for each possible cas latency; data element n + 3 is the last desired data element of a longer burst.
is42s32200e, is45s32200e 20 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 don't care clk command address dq t0 t1 t2 t3 t4 t5 t6 read nop nop nop read nop nop d out n d out n+1 d out n+2 d out n+3 d out b bank, col n bank, col b cas latency - 2 x = 1 cycle don't care clk command address dq t0 t1 t2 t3 t4 t5 t6 t7 read nop nop nop read nop nop nop d out n d out n+1 d out n+2 d out n+3 d out b bank, col n bank, col b cas latency - 3 x = 2 cycles consecutive read bursts
integrated silicon solution, inc. www.issi.com 21 rev. d 07/12/2010 is42s32200e, is45s32200e don't care clk command address dq t0 t1 t2 t3 t4 t5 read read read read nop nop d out n d out b d out m d out x bank, col n bank, col b cas latency - 2 bank, col m bank, col x don't care clk command address dq t0 t1 t2 t3 t4 t5 t6 read read read read nop nop nop d out n d out b d out m d out x bank, col n bank, col b cas latency - 3 bank, col m bank, col x random read accesses
is42s32200e, is45s32200e 22 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 don't care clk dqm command address dq t0 t1 t2 t3 t4 read nop nop nop write d out n d in b bank, col n bank, col b t ds t hz cas lantency 3 don't care clk dqm command address dq t0 t1 t2 t3 t4 t5 read nop nop nop nop write bank, col n bank, col b d out n d in b t ds t hz cas lantency 3 rw1 - read to write rw2 - read to write with extra clock cycle
integrated silicon solution, inc. www.issi.com 23 rev. d 07/12/2010 is42s32200e, is45s32200e don't care clk command address dq t0 t1 t2 t3 t4 t5 t6 t7 read nop nop nop nop nop ac t ive d out n d out n+1 d out n+2 d out n+3 bank a, col n bank a, ro w bank (a or all) cas latency - 2 x = 1 cycle t rp precharge don't care clk command address dq t0 t1 t2 t3 t4 t5 t6 t7 read nop nop nop nop nop ac tive d out n d out n+1 d out n+2 d out n+3 bank, col n bank, col b cas latency - 3 x = 2 cycles t rp bank a, ro w precharge read to precharge
is42s32200e, is45s32200e 24 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 don't care clk command address dq t0 t1 t2 t3 t4 t5 t6 read nop nop nop nop nop d out n d out n+1 d out n+2 d out n+3 bank a, col n cas latency - 2 x = 1 cycle b urst termina te don't care clk command address dq t0 t1 t2 t3 t4 t5 t6 t7 read nop nop nop nop nop nop d out n d out n+1 d out n+2 d out n+3 bank, col n cas latency - 3 x = 2 cycles burs t termina te read burst termination
integrated silicon solution, inc. www.issi.com 25 rev. d 07/12/2010 is42s32200e, is45s32200e clk cke high column address auto precharge bank address cs ras cas we a0-a7 a10 ba0, ba1 no precharge a8, a9 write command the starting column and bank addresses are provided with the write command, and auto precharge is either enabled or disabled for that access. if auto precharge is enabled, the row being accessed is precharged at the completion of the burst. for the generic write commands used in the following illustrations, auto precharge is disabled. during write bursts, the frst valid data-in element will be registered coincident with the write command. subsequent data elements will be registered on each successive posi - tive clock edge. upon completion of a fxed-length burst, assuming no other commands have been initiated, the dqs will remain high-z and any additional input data will be ignored (see write burst). a full-page burst will con- tinue until terminated. (at the end of the page, it will wrap to column 0 and continue.) data for any write burst may be truncated with a subse- quent write command, and data for a fxed-length write burst may be immediately followed by data for a write command. the new write command can be issued on any clock following the previous write command, and the data provided coincident with the new command applies to the new command. an example is shown in write to write diagram. data n + 1 is either the last of a burst of two or the last desired of a longer burst. the 64mb sdram uses a pipelined architecture and therefore does not require the 2n rule as - sociated with a prefetch architecture. a write command can be initiated on any clock cycle following a previous write command. full-speed random write accesses within a page can be performed to the same bank, as shown in random write cycles, or each subsequent write may be performed to a different bank. data for any write burst may be truncated with a subse- quent read command, and data for a fxed-length write burst may be immediately followed by a subsequent read command. once the read com mand is registered, the data inputs will be ignored, and writes will not be ex - ecuted. an example is shown in write to read. data n + 1 is either the last of a burst of two or the last desired of a longer burst. data for a fxed-length write burst may be fol lowed by, or truncated with, a precharge command to the same bank (provided that auto precharge was not acti - vated), and a full-page write burst may be truncated with a precharge command to the same bank. the precharge command should be issued t w r after the clock edge at which the last desired input data element is registered. the auto precharge mode requires a t w r of at least one clock plus time, regardless of frequency. in addition, when truncating a write burst, the dqm signal must be used to mask input data for the clock edge prior to, and the clock edge coincident with, the precharge command. an example is shown in the write to pre- charge diagram. data n +1 is either the last of a burst of two or the last desired of a longer burst. following the precharge command, a subsequent command to the same bank cannot be issued until t r p is met. in the case of a fxed-length burst being executed to comple - tion, a precharge command issued at the optimum time (as described above) provides the same operation that would result from the same fxed-length burst with auto precharge. the disadvantage of the precharge command is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the precharge command is that it can be used to truncate fxed-length or full-page bursts. fixed-length or full-page write bursts can be truncated with the burst terminate command. when truncat - ing a write burst, the input data applied coincident with the burst terminate command will be ignored. the last data written (provided that dqm is low at that time) will be the input data applied one clock previous to the burst terminate command. this is shown in write burst termination, where data n is the last desired data element of a longer burst. writes write bursts are initiated with a write command, as shown in write command diagram.
is42s32200e, is45s32200e 26 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 clk command address dq t0 t1 t2 t3 write nop nop nop d in n d in n+1 bank, col n don't care clk command address dq t0 t1 t2 write nop write d in n d in n+1 d in b bank, col n bank, col b don't care write burst write to write clk command address dq t0 t1 t2 t3 write write write write d in n d in b d in m d in x bank, col n bank, col b bank, col m bank, col x random write cycles burst length = 2 dqm ix low. dqmx is low. each write command may be to any bank. dqmx is low. each write command may be to any bank.
integrated silicon solution, inc. www.issi.com 27 rev. d 07/12/2010 is42s32200e, is45s32200e don't care clk dqm command address dq t0 t1 t2 t3 t4 t5 t6 write nop nop nop ac t ive nop bank a, col n bank a, ro w bank (a or all) t wr t rp precharge d in n d in n+1 write to precharge (t w r = 1 clk (t c k t w r ) don't care clk command address dq t0 t1 t2 t3 t4 t5 write nop read nop nop nop d in n d in n+1 d out b d out b+1 bank, col n bank, col b write to read
is42s32200e, is45s32200e 28 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 don't care clk dqm command address dq t0 t1 t2 t3 t4 t5 t6 write nop nop nop nop ac tive bank a, col n bank a, ro w bank (a or all) t wr t rp precharge d in n d in n+1 write to precharge (t w r = 2 clk (t w r > t c k ) clk command address dq t0 t1 t2 write d in n (d ata ) bank, col n don't care (address) burs t termina te next command write burst termination
integrated silicon solution, inc. www.issi.com 29 rev. d 07/12/2010 is42s32200e, is45s32200e clk cke high all banks bank select bank address cs ras cas we a0-a9 a10 ba0, ba1 don't care clk cke command nop nop a ctive t cks t cks all banks idle enter po wer-do wn mode exit po wer-do wn mode t rcd t ras t rc input b uff ers gated off precharge command power-down power-down power-down occurs if cke is registered low coincident with a nop or command inhibit when no accesses are in progress. if power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in either bank, this mode is referred to as active power-down. entering power-down deactivates the input and output buffers, excluding cke, for maximum power savings while in standby. the device may not remain in the power-down state longer than the refresh period (t r e f ) since no refresh operations are performed in this mode. the power-down state is exited by registering a nop or command inhibit and cke high at the desired clock edge (meeting t c k s ). see fgure below. precharge the precharge command (see fgure) is used to deac- tivate the open row in a particular bank or the open row in all banks. the bank(s) will be available for a subsequent row access some specifed time (t r p ) after the precharge command is issued. input a10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs ba0, ba1 select the bank. when all banks are to be precharged, inputs ba0, ba1 are treated as dont care. once a bank has been precharged, it is in the idle state and must be activated prior to any read or write commands being issued to that bank.
is42s32200e, is45s32200e 30 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 don't care clk cke command address dq t0 t1 t2 t3 t4 t5 nop write nop nop bank a, col n d in n d in n+1 d in n+2 internal clock don't care clk cke command address dq t0 t1 t2 t3 t4 t5 t6 read nop nop nop nop nop bank a, col n d out n d out n+1 d out n+2 d out n+3 internal clock clock suspend clock suspend mode occurs when a column access/burst is in progress and cke is registered low. in the clock suspend mode, the internal clock is deactivated, freezing the synchronous logic. for each positive clock edge on which cke is sampled low, the next internal positive clock edge is suspended. any command or data present on the input pins at the time of a suspended internal clock edge is ignored; any data present on the dq pins remains driven; and burst counters are not incremented, as long as the clock is suspended. (see following examples.) clock suspend mode is exited by registering cke high; the internal clock and related operation will resume on the subsequent positive clock edge. clock suspend during write burst clock suspend during read burst burst length 4 or greater dqm is low. cas latency=2. burst length =4 or greater. dqm is low.
integrated silicon solution, inc. www.issi.com 31 rev. d 07/12/2010 is42s32200e, is45s32200e don't care clk command bank n bank m address dq t0 t1 t2 t3 t4 t5 t6 t7 nop nop nop nop nop nop d out a d out a+1 d out b d out b+1 bank n, col a bank m, col b cas latency - 3 (bank n) cas latency - 3 (bank m) t rp - bank n t rp - bank m read - ap bank n read - ap bank m pa ge activ e read with burst of 4 interr upt burst, precharge idle pa ge activ e read with burst of 4 precharge inter nal states don't care clk command bank n bank m address dqm dq t0 t1 t2 t3 t4 t5 t6 t7 nop nop nop nop nop nop d out a d in b d in b+1 d in b+2 d in b+3 bank n, col a bank m, col b cas latency - 3 (bank n) t rp - bank n t rp - bank m read - ap bank n write - ap bank m read with burst of 4 interr upt burst, precharge idle pa ge activ e write with burst of 4 wr ite-bac k inter nal states p age activ e burst read/single write the burst read/single write mode is entered by programming the write burst mode bit (m9) in the mode register to a logic 1. in this mode, all write commands result in the access of a single column location (burst of one), regardless of the programmed burst length. read commands access columns according to the programmed burst length and sequence, just as in the normal mode of operation (m9 = 0). concurrent auto precharge an access command (read or write) to another bank while an access command with auto precharge enabled is executing is not allowed by sdrams, unless the sdram supports concurrent auto precharge. issi sdrams support concurrent auto precharge. four cases where concurrent auto precharge occurs are defned below. read with auto precharge 1. interrupted by a read (with or without auto precharge): a read to bank m will interrupt a read on bank n, cas latency later. the precharge to bank n will begin when the read to bank m is registered. 2. interrupted by a write (with or without auto precharge): a write to bank m will interrupt a read on bank n when registered. dqm should be used two clocks prior to the write command to prevent bus contention. the precharge to bank n will begin when the write to bank m is registered. fig cap 1 - read with auto precharge interrupted by a read fig cap 2 - read with auto precharge interrupted by a write
is42s32200e, is45s32200e 32 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 don't care clk command bank n bank m address dq t0 t1 t2 t3 t4 t5 t6 t7 nop nop nop nop nop nop d in a d in a+1 d out b d out b+1 bank n, col a bank m, col b cas latency - 3 (bank m) t rp - bank n t rp - bank m write - ap bank n read - ap bank m pa ge activ e write with burst of 4 interr upt burst, wr ite-bac k precharge pa ge activ e read with burst of 4 precharge inter nal states t wr - bank n don't care clk command bank n bank m address dq t0 t1 t2 t3 t4 t5 t6 t7 nop nop nop nop nop nop bank n, col a bank m, col b t rp - bank n t rp - bank m write - ap bank n write - ap bank m pa ge activ e write with burst of 4 interr upt burst, wr ite-bac k precharge pa ge activ e write with burst of 4 wr ite-bac k inter nal states t wr - bank n d in a d in a+1 d in a+2 d in b d in b+1 d in b+2 d in b+3 write with auto precharge 3. interrupted by a read (with or without auto precharge): a read to bank m will interrupt a write on bank n when registered, with the data-out appearing cas latency later. the precharge to bank n will begin after t is met, where t begins when the read to bank m is registered. the last valid write to bank n will be data-in registered one clock prior to the read to bank m. 4. interrupted by a write (with or without auto precharge): a write to bank m will interrupt a write on bank n when registered. the precharge to bank n will begin after t is met, where t begins when the write to bank m is registered. the last valid data write to bank n will be data registered one clock prior to a write to bank m. fig cap 3 - write with auto precharge interrupted by a read fig cap 4 - write with auto precharge interrupted by a write
integrated silicon solution, inc. www.issi.com 33 rev. d 07/12/2010 is42s32200e, is45s32200e absolute maximum ratings (1) symbol parameters rating unit v d d m a x maximum supply voltage C1.0 to +4.6 v v d d q m a x maximum supply voltage for output buffer C1.0 to +4.6 v v i n input voltage C1.0 to +4.6 v v o u t output voltage C1.0 to +4.6 v p d m a x allowable power dissipation 1 w i c s o utput shorted current 50 ma t o p r o perating temperature com. 0 to +70 c ind. C40 to +85 a1: C40 to +85 a2: C40 to +105 t s t g storage temperature C55 to +150 c dc recommended operating conditions (2,5) (t a = 0c to +70c for com. grade. t a = -40c to +85c for ind. and a1 grade, t a = -40c to +105c for a2 grade) symbol parameter min. typ. max. unit v d d , v d d q supply voltage 3.0 3.3 3.6 v v i h input high voltage (3) 2.0 v d d + 0.3 v v i l input low voltage (4) -0.3 +0.8 v capacitance characteristics (2, 6) (at t a = 0 to +25c, v d d = v d d q = 3.3 0.3v, f = 1 mhz) symbol parameter typ. max. unit c i n 1 input capacitance: (clk) 6 pf c i n 2 input capacitance: (all other input only pins) 6 pf ci/o data input/output capacitance: dq0-dq31 6 pf notes: 1. stress greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specifcation is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. all voltages are referenced to gnd. 3. v i h (max) = v d d q + 1.2v with a pulse width 3 ns. the pluse width cannot be greater than one third of the cycle rate. 4. v i l (min) = gnd C 1.2v with a pulse < 3 ns. the pluse width cannot be greater than one third of the cycle rate. 5. an initial pause of 100us is required after power up, followed by two auto refresh commands, before proper device opera- tion is ensured. (vdd and vddq must be powered up simultaneously. gnd and gndq must be at same potential.) the two auto refresh command wake-ups should be repeated anytime the t r e f refresh requirement is exceeded. 6. the parameter is characterized.
is42s32200e, is45s32200e 34 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 dc electrical characteristics 1 (recommended operation conditions unless otherwise noted.) symbol parameter test condition -5 -6 -7 -75e unit i d d 1 (1) operating current one bank active, cl = 3, bl = 1, 180 150 130 130 ma t c l k = t c l k (min), t r c = t r c (min) i d d 2p precharge standby current cke v i l ( m a x ), t c k = 15ns 2 2 2 2 ma (in power-down mode) i d d 2 p s precharge standby current cke v i l ( m a x ), clk v i l ( m a x ) 2 2 2 2 ma (in power-down mode) i d d 2n (2) precharge standby current cs v d d - 0.2v, cke v i h ( m i n ) 45 45 45 45 ma (in non power-down mode) t c k = 15ns i d d 2n s precharge standby current cs v d d - 0.2v, cke v i h ( m i n ) or 30 30 30 30 ma (in non power-down mode) cke v i l ( m a x ), all inputs stable i d d 3n (2) active standby current cs v d d - 0.2v, cke v i h ( m i n ) 55 55 55 55 ma (in non power-down mode) t c k = 15ns i d d 3n s active standby current cs v d d - 0.2v, cke v i h ( m i n ) or 30 30 30 30 ma (in non power-down mode) cke v i l ( m a x ), all inputs stable i d d 3p active standby current cke v i l ( m a x ), t c k = 15ns 8 8 8 8 ma (power-down mode) i d d 3 p s active standby current cke v i l ( m a x ), clk v i l ( m a x ) 8 8 8 8 ma (power-down mode) i d d 4 operating current all banks active, bl = 4, cl = 3, 200 160 140 160 ma t c k = t c k (min) i d d 5 auto-refresh current t r c = t r c (min), t c l k = t c l k (min) 150 130 120 130 ma i d d 6 self-refresh current cke 0.2v 2 2 2 2 ma notes: 1. i d d ( m a x ) is specifed at the output open condition. 2. input signals are changed one time during 30ns. 3. test condition for -75e is cl = 2. dc electrical characteristics 2 (recommended operation conditions unless otherwise noted.) symbol parameter test condition min max unit i i l input leakage current 0v vin v d d , with pins other than -5 5 a the tested pin at 0v i o l output leakage current output is disabled, 0v vout v d d , -5 5 a v o h output high voltage level i o h = -2ma 2.4 v v o l output low voltage level i o l = 2ma 0.4 v
integrated silicon solution, inc. www.issi.com 35 rev. d 07/12/2010 is42s32200e, is45s32200e ac electrical characteristics (1,2,3) -5 -6 -7 -75e symbol parameter condition min. max. min. max. min. max. min. max. units t c k 3 clock cycle time cas latency = 3 5 6 7 ns t c k 2 cas latency = 2 10 10 10 7.5 ns t a c 3 access time from clk (4) cas latency = 3 5 5.5 5.5 ns t a c 2 cas latency = 2 8 8 8 5.5 ns t c h clk high level width 2 2.5 2.5 2.5 ns t c l clk low level width 2 2.5 2.5 2.5 ns t o h output data hold time 2.5 2.5 2.5 2.5 ns t l z output low impedance time 0 0 0 0 ns t h z 3 output high impedance time (5) cas latency = 3 5 5.5 5.5 ns t h z 2 cas latency = 2 8 8 8 5.5 ns t d s input data setup time 1.5 1.5 1.5 1.5 ns t d h input data hold time 0.8 0.8 0.8 0.8 ns t a s address setup time 1.5 1.5 1.5 1.5 ns t a h address hold time 0.8 0.8 0.8 0.8 ns t c k s cke setup time 1.5 1.5 1.5 1.5 ns t c k h cke hold time 0.8 0.8 0.8 0.8 ns t c k a cke to clk recovery delay time 1clk+3 1clk+3 1clk+3 1clk+3 ns t c m s command setup time (cs, ras, cas, we, dqm) 1.5 1.5 1.5 1.5 ns t c m h command hold time (cs, ras, cas, we, dqm) 0.8 0.8 0.8 0.8 ns t r c command period (ref to ref / act to act) 55 60 70 67.5 ns t r a s command period (act to pre) 40 120k 42 120k 42 120k 45 120k ns t r p command period (pre to act) 15 18 20 15 ns t r c d active command to read / write command delay time 15 18 20 15 ns t r r d command period (act [0] to act[1]) 10 12 14 15 ns
is42s32200e, is45s32200e 36 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 ac electrical characteristics (1,2,3) -5 -6 -7 -75e symbol parameter condition min. max. min. max. min. max. min. max. units t d p l 3 input data to precharge cas latency = 3 2clk 2clk 2clk ns command delay time t d p l 2 cas latency = 2 2clk 2clk 2clk 2clk ns t d a l 3 input data to active / refresh cas latency = 3 2clk+t r p 2clk+t r p 2clk+t r p ns command delay time (during auto-precharge) t d a l 2 cas latency = 2 2clk+t r p 2clk+t r p 2clk+t r p 2clk+t r p ns t t transition time (2) 0.3 1.2 0.3 1.2 0.3 1.2 0.3 1.2 ns t w r write recovery time 1clk+5ns 1clk+6ns 1clk+7ns 1clk+7.5ns t c k t x s r exit self refresh to active time (6) 60 66 77 75 ns t r e f refresh cycle time (4096) t a 70 o c com, ind, 64 64 64 64 ms a1, a2 t a 85 o c ind,a1,a2 64 64 64 ms t a > 85 o c a2 16 ms notes: 1. an initial pause of 100us is required after power up, followed by two auto refresh commands, before proper device opera- tion is ensured. (v d d and v d d q must be powered up simultaneously. gnd and gndq must be at same potential.) the two auto refresh command wake-ups should be repeated anytime the t r e f refresh requirement is exceeded. 2. measured with t t = 0.5 ns. 3. the reference level is 1.5v when measuring input signal timing. rise/fall times are measured between v i h (min.) and v i l (max.). 4. access time is measured at 1.5v with the load shown in the fgure that follows. 5. the time t h z (max.) is defned as the time required for the output voltage to transition by 200 mv from v o h (min.) or v o l (max.) when the output is in the high impedance state. 6. clk must be toggled a minimum of two times during this period.
integrated silicon solution, inc. www.issi.com 37 rev. d 07/12/2010 is42s32200e, is45s32200e operating frequency / latency relationships (1) symbol p arameter condition -5 -6 -7 -75e units clock cycle time 5 6 7 7.5 ns operating frequency cl=3 200 1 166 1 143 1 133 2 mhz t c c d read/write command to read/write command 1 1 1 1 cycle t c k e d cke to clock disable or power-down entry mode 1 1 1 1 cycle t p e d cke to clock enable or power-down exit setup mode 1 1 1 1 cycle t d q d dqm to input data delay 0 0 0 0 cycle t d q m dqm to data mask during writes 0 0 0 0 cycle t d q z dqm to data high-impedance during reads 2 2 2 2 cycle t d w d write command to input data delay 0 0 0 0 cycle t d a l data-in to active command cl=3 5 5 5 cycle cl=2 4 4 4 4 t d p l data-in to precharge command 2 2 2 2 cycle t b d l last data-in to burst stop command 1 1 1 1 cycle t c d l last data-in to new read/write command 1 1 1 1 cycle t r d l last data-in to precharge command 2 2 2 2 cycle t m r d load mode register command 2 2 2 2 cycle to active or refresh command t r o h data-out to high-impedance from cl = 3 3 3 3 cycle precharge command cl = 2 2 2 2 2 note: 1. if cl = 2, the minimum t c k 2 is 10ns for -5, -6 and -7. 2. for -75e. cas latency = 2. ac test conditions (input/output reference level: 1.4v) input load output load 3v 1.4v 0v clk input output t ch t cmh t ac t oh t cms t ck t cl 3v 1.4v 1.4v 1.4v 0v i/o 50 ? +1.4v 30 pf
is42s32200e, is45s32200e 38 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 initialize and l oad mode register (1) don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t ch t cl t ck t cms t cmh t cms t cmh t cms t cmh t cks t ckh t0 t1 tn+1 t o+1 tp+1 tp+2 tp+3 t mrd t rfc t rfc t rp ro w ro w bank t as t ah t as t ah code code all banks single bank all banks au to refresh au to refresh load mode register t = 100s min. po wer-up: v cc and clk stab le precharge all banks au to refresh au to refresh program mode register nop precharge nop nop nop a ctive t notes: 1. if cs is high at clock high time, all commands applied are nop. 2. the mode register may be loaded prior to the auto-refresh cycles, if desired. 3. jedec and pc100 specify three clocks. 4. outputs are guaranteed high-z after the command is issued.
integrated silicon solution, inc. www.issi.com 39 rev. d 07/12/2010 is42s32200e, is45s32200e p ower-d own mode cycle cas latency = 2, 3 don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t as t ah bank t ch t cl t ck t cms t cmh t cks t ckh precharge nop nop nop ac tive all banks single bank ro w ro w bank t cks t cks precharge all activ e banks all banks idle tw o cloc k cycles input b uff ers gated off while in po wer-do wn mode all banks idle , enter po wer-do wn mode exit p ow er-do wn mode t0 t1 t2 tn+1 tn+2 high-z
is42s32200e, is45s32200e 40 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 clock suspend mode cas latency = 2, burst length = 2 don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh t as t ah t as t ah t as t ah t ch t cl t ck t cms t cmh t cks t ckh column m (2) t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 read nop nop nop nop nop write nop t cks t ckh bank bank column n t ac t ac t oh t hz d out m d out m+1 t lz undefined d in n +1 t ds t dh d in n
integrated silicon solution, inc. www.issi.com 41 rev. d 07/12/2010 is42s32200e, is45s32200e a uto -refresh cycle cas latency = 2, 3 t rp t rfc t rfc don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t as t ah t ch t cl t ck t cms t cmh t cks t ckh t0 t1 t2 tn+1 to +1 all banks single bank bank (s) ro w ro w bank high-z precharge nop nop nop a ctive au to refresh au to refresh
is42s32200e, is45s32200e 42 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 self-refresh cycle clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t as t ah bank t cl t ch t ck t cms t cmh t cks t ckh all banks single bank t cks precharge all activ e banks clk stab le pr ior to e xiting self refresh mode enter self refresh mode exit self refresh mode (restar t refresh time base) t0 t1 t2 tn+1 to +1 to +2 high-z au to refresh au to refresh precharge nop nop nop t cks t ras t rp t xsr don't care note: 1. self-refresh mode is not supported for a2 grade with t a > 85 o c.
integrated silicon solution, inc. www.issi.com 43 rev. d 07/12/2010 is42s32200e, is45s32200e read without auto precharge don't care undefined clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh ac tive nop read nop nop nop precharge nop ac tive t as t ah t as t ah t as t ah ro w ro w bank column m t ch t cl t ck t cms t cmh t cks t ckh bank t rcd cas latency t ac t ac t ac t ac t oh t hz t oh d out m t oh d out m+1 t oh d out m+2 d out m+3 t0 t1 t2 t3 t4 t5 t6 t7 t8 disable au to precharge ro w ro w bank t lz t ras t rc t rp all banks single bank bank cas latency = 2, burst length = 4
is42s32200e, is45s32200e 44 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 read with auto precharge don't care undefined clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh ac tive nop read nop nop nop nop nop ac tive t as t ah t as t ah t as t ah ro w ro w bank column m ) t ch t cl t ck t cms t cmh t cks t ckh bank t rcd t ras t rc cas latency t ac t ac t ac t ac t oh t hz t oh d out m t oh d out m+1 t oh d out m+2 d out m+3 t0 t1 t2 t3 t4 t5 t6 t7 t8 t rp enable au to precharge ro w ro w bank t lz cas latency = 2, burst length = 4
integrated silicon solution, inc. www.issi.com 45 rev. d 07/12/2010 is42s32200e, is45s32200e single read without auto precharge don't care undefined clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh ac tive nop read nop nop precharge nop a ctive nop t as t ah t as t ah t as t ah ro w ro w bank column m t ch t cl t ck t cms t cmh t cks t ckh bank t rcd t ras t rc cas latency t ac t hz t oh d out m t0 t1 t2 t3 t4 t5 t6 t7 t8 t rp disable au to precharge ro w ro w bank t lz all banks single bank bank cas latency = 2, burst length = 1
is42s32200e, is45s32200e 46 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 single read with auto precharge don't care undefined clk cke command dqm0-dqm3 a0-a9, a10 ba0, ba1 dq t cms t cmh a ctive nop nop nop read nop nop a ctive nop t as t ah t as t ah t as t ah ro w ro w bank column m t ch t cl t ck t cms t cmh t cks t ckh bank t rcd t ras t rc cas latency t ac t hz t oh d out m t0 t1 t2 t3 t4 t5 t6 t7 t8 t rp enable au to precharge ro w ro w bank cas latency = 2, burst length = 1
integrated silicon solution, inc. www.issi.com 47 rev. d 07/12/2010 is42s32200e, is45s32200e alternating bank read accesses bank 0 bank 3 bank 3 bank 0 don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh t as t ah t as t ah t as t ah t rcd - bank 0 cas latency - bank 0 t rcd - bank 0 t ras - bank 0 t rc - bank 0 t ch t cl t ck t cms t cmh t cks t ckh a ctive nop read nop ac tive nop read nop a ctive ro w ro w bank 0 ro w ro w t rrd t rcd - bank 3 t rp - bank 0 column m ro w column b (2) ro w enable au to precharge enable au to precharge t0 t1 t2 t3 t4 t5 t6 t7 t8 t ac t oh t oh t oh t oh t oh d out m d out m+ 1 d out m+ 2 d out m+ 3 d out b t ac t ac t ac t ac t ac t lz cas latency - bank 3
is42s32200e, is45s32200e 48 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 read - full-page burst don't care undefined clk cke command dqm0-dqm3 a0-a9, a10 ba0, ba1 dq t cms t cmh a ctive nop read nop nop nop nop nop burst term nop nop t as t ah t as t ah t as t ah ro w ro w bank column m t ch t cl t ck t cms t cmh t cks t ckh bank t rcd cas latency t ac t ac t ac t ac t ac t hz t lz t ac t oh t oh t oh t oh t oh t oh d out m d out m+ 1 d out m+ 2 d out m- 1 d out m d out m+ 1 full page completion full-page b urst not self-ter minating. use burst termina te command. t0 t1 t2 t3 t4 t5 t6 tn+1 tn+2 tn+3 tn+4 each ro w (x32) has 256 locations
integrated silicon solution, inc. www.issi.com 49 rev. d 07/12/2010 is42s32200e, is45s32200e read - dqm operation don't care undefined clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh ac tive nop read nop nop nop nop nop nop t as t ah t as t ah t as t ah enable au to precharge disable au to precharge ro w ro w bank t rcd cas latency d out m d out m+ 2 d out m+ 3 column m bank t ch t cl t ck t cms t cmh t cks t ckh t oh t oh t oh t ac t ac t ac t hz t hz t lz t lz t0 t1 t2 t3 t4 t5 t6 t7 t8 cas latency = 2, burst length = 4
is42s32200e, is45s32200e 50 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 write - without auto precharge don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh t as t ah t as t ah t as t ah t rcd t ras t rc t ch t cl t ck t cms t cmh t cks t ckh a ctive nop write nop nop nop precharge nop ac tive t wr t rp column m ro w disable au to precharge ro w ro w ro w bank t ds t dh t ds t dh t ds t dh t ds t dh d in m d in m+ 1 d in m+ 2 d in m+ 3 bank bank bank all banks single bank t0 t1 t2 t3 t4 t5 t6 t7 t8 burst length = 4
integrated silicon solution, inc. www.issi.com 51 rev. d 07/12/2010 is42s32200e, is45s32200e write - with auto precharge don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh t as t ah t as t ah t as t ah t rcd t ras t rc t ch t cl t ck t cms t cmh t cks t ckh a ctive nop write nop nop nop nop nop nop ac tive t wr t rp column m ro w bank bank enable au to precharge ro w ro w ro w bank t ds t dh t ds t dh t ds t dh t ds t dh d in m d in m+ 1 d in m+ 2 d in m+ 3 t0 t1 t2 t3 t4 t5 t6 t7 t8 t9
is42s32200e, is45s32200e 52 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 single write - without auto precharge don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh t as t ah t as t ah t as t ah t ds t dh t rcd t ras t rc t ch t cl t ck t cms t cmh t cks t ckh a ctive nop write nop nop precharge nop ac tive nop t wr t rp disable au to precharge ro w ro w ro w bank d in m column m ro w bank bank bank all banks single bank t0 t1 t2 t3 t4 t5 t6 t7 t8
integrated silicon solution, inc. www.issi.com 53 rev. d 07/12/2010 is42s32200e, is45s32200e single write - with auto precharge don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh t as t ah t as t ah t as t ah t ds t dh t rcd t ras t rc t ch t cl t ck t cms t cmh t cks t ckh a ctive nop nop nop write nop nop nop ac tive nop t wr t rp column m ro w bank bank enable au to precharge ro w ro w ro w bank d in m t0 t1 t2 t3 t4 t5 t6 t7 t8 t9
is42s32200e, is45s32200e 54 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 alternating bank write access bank 0 bank 1 bank 1 bank 0 don't care clk cke command dqm0-dqm3 a0-a9 a10 ba0, ba1 dq t cms t cmh t as t ah t as t ah t as t ah t ds t dh t ds t dh t ds t dh t rcd - bank 0 t rcd - bank 0 t wr - bank 1 t ras - bank 0 t rc - bank 0 t ch t cl t ck t ds t dh t ds t dh t ds t dh t ds t dh t ds t dh t cms t cmh t cks t ckh a ctive nop write nop a ctive nop write nop nop a ctive d in m d in m+ 1 d in m+ 2 d in m+ 3 d in b d in b+ 1 d in b+ 2 d in b+ 3 ro w ro w bank 0 ro w ro w t rrd t rcd - bank 1 t wr - bank 0 t rp - bank 0 column m ro w column b ro w enable au to precharge enable au to precharge t0 t1 t2 t3 t4 t5 t6 t7 t8 t9
integrated silicon solution, inc. www.issi.com 55 rev. d 07/12/2010 is42s32200e, is45s32200e don't care clk cke command dqm0-dqm 3 a0-a9 a10 ba0, ba1 dq t cms t cmh a ctive nop write nop nop nop nop burst term nop t as t ah t as t ah t as t ah t ds t dh t ds t dh t ds t dh ro w ro w bank t rcd d in m d in m+ 1 d in m+ 2 d in m+ 3 d in m- 1 column m t ch t cl t ck t ds t dh t ds t dh t ds t dh t cms t cmh t cks t ckh bank full page completed t0 t1 t2 t3 t4 t5 tn+1 tn+2 256 locations within same ro w f ull-page burst does not self-terminate . can use burst termina te to stop . write - full page burst
is42s32200e, is45s32200e 56 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 don't care clk cke command dqm0-dqm 3 a0-a9 a10 ba0, ba1 dq t cms t cmh ac tive nop write nop nop nop nop nop t as t ah t as t ah t as t ah t ds t dh t ds t dh t ds t dh enable au to precharge disable au to precharge ro w ro w bank t rcd d in m d in m+ 2 d in m+ 3 column m bank t ch t cl t ck t cms t cmh t cks t ckh t0 t1 t2 t3 t4 t5 t6 t7 write - dqm operation
integrated silicon solution, inc. www.issi.com 57 rev. d 07/12/2010 is42s32200e, is45s32200e ordering information commercial range: 0 c to +70c frequency speed (ns) order part no. package 200 mhz 5 is42s32200e-5tl 400-mil tsop ii, lead-free is42s32200e-5bl 90-ball bga, lead-free 166 mhz 6 is42s32200e-6tl 400-mil tsop ii, lead free IS42S32200E-6Bl 90-ball bga, lead-free IS42S32200E-6B 90-ball bga 143 mhz 7 is42s32200e-7tl 400-mil tsop ii, lead free is42s32200e-7bl 90-ball bga, lead-free is42s32200e-7b 90-ball bga industrial range: -40 c to +85c frequency speed (ns) order part no. packag e 166 mhz 6 is42s32200e-6tli 400-mil tsop ii, lead free IS42S32200E-6Bli 90-ball bga, lead-free IS42S32200E-6Bi 90-ball bga 143 mhz 7 is42s32200e-7tli 400-mil tsop ii, lead free is42s32200e-7bli 90-ball bga, lead-free ordering information automotive range: -40 c to +85c fr equency speed (ns) order part no. p ackage 166 mhz 6 is45s32200e-6tla1 400-mil tsop ii, lead free is45s32200e-6bla1 90-ball bga, lead-free 143 mhz 7 is45s32200e-7tla1 400-mil tsop ii, lead free is45s32200e-7bla1 90-ball bga, lead-free is45s32200e-7ba1 90-ball bga 133 mhz 7.5 is45s32200e-75etla1 400-mil tsop ii, lead free is45s32200e-75ebla1 90-ball bga, lead-free automotive range: -40 c to +105c frequency speed (ns) order part no. package 143 mhz 7 is45s32200e-7tla2 400-mil tsop ii, lead free is45s32200e-7bla2 90-ball bga, lead-free
is42s32200e, is45s32200e 58 integrated silicon solution, inc. www.issi.com rev. d 07/12/2010 note : 4. formed leads shall be planar with respect to one another within 0.1mm 2. dimension d and e1 do not include mold protrusion . at the seating plane after final test. 1. controlling dimension : mm 3. dimension b does not include dambar protrusion/intrusion. 09/26/2006 package outline
integrated silicon solution, inc. www.issi.com 59 rev. d 07/12/2010 is42s32200e, is45s32200e 0.45 0.80 d 1 2. reference document : jedec mo-207 1. controlling dimension : mm . note : package outline 08/14/2008

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